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TrenchHV TM Power
MOSFET
IXTH150N17T
V DSS
I D25
R DS(on)
= 175V
= 150A
≤ 12m Ω
N-Channel Enhancement Mode
Avalanche Rated
TO-247
Symbol
Test Conditions
Maximum Ratings
V DSS
T J = 25 ° C to 175 ° C
175
V
V DGR
V GSM
T J = 25 ° C to 175 ° C, R GS = 1M Ω
Transient
175
± 30
V
V
G
D
S
(TAB)
I D25
T C = 25 ° C
150
A
I LRMS
I DM
I A
Lead Current Limit, RMS
T C = 25 ° C, pulse width limited by T JM
T C = 25 ° C
75
400
75
A
A
A
G = Gate
S = Source
D = Drain
TAB = Drain
E AS
dV/dt
P D
T J
T JM
T stg
T L
T sold
M d
Weight
T C = 25 ° C
I S ≤ I DM , V DD ≤ V DSS , T J ≤ 175 ° C
T C = 25 ° C
1.6mm (0.062in.) from case for 10s
Plastic body for 10 seconds
Mounting torque
1.5
15
830
-55 ... +175
175
-55 ... +175
300
260
1.13 / 10
6
J
V/ns
W
° C
° C
° C
° C
° C
Nm/lb.in.
g
Features
International standard package
Avalanche rated
175°C Operating Temperature
High current handling capability
Advantages
Easy to mount
Space savings
High power density
Applications
Symbol Test Conditions
(T J = 25 ° C unless otherwise specified)
BV DSS V GS = 0V, I D = 250 μ A
Characteristic Values
Min. Typ. Max.
175 V
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
V GS(th)
V DS = V GS , I D = 1mA
2.5
5.0
V
power supplies
DC choppers
I GSS
V GS = ± 20V, V DS = 0V
± 200 nA
AC motor drives
I DSS
V DS = V DSS
V GS = 0V
T J = 150 ° C
5 μ A
250 μ A
Uninterruptible power supplies
High speed power switching
applications
R DS(on)
V GS = 10V, I D = 0.5 ? I D25 , Notes 1
10
12 m Ω
? 2008 IXYS CORPORATION, All rights reserved
DS99831B(12/08)
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